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PDF CGHV35060MP Data sheet ( Hoja de datos )
| Número de pieza | CGHV35060MP | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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PRELIMINARY
CGHV35060MP
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high
electron mobility transistor (HEMT) optimized for S Band performance. The
CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz
while the input matched transistor provides optimal gain, power and efficiency
in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The
typical performance plots in the datasheet are derived with CGHV35060MP
matched into a 3.1-3.5GHz high power amplifier.
PN: CGHV35060MP
Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.3 GHz
3.5 GHz
Units
Gain
14.5
14.3
13.8
dB
Output Power
88 88 75 W
Drain Efficiency
61
67
64
%
Note:
Measured in the CGHV35060MP-TB amplifier circuit, under 100 μs pulse width, 10% duty cycle, PIN = 35 dBm.
Features
• Reference design amplifier 3.1 - 3.5 GHz
• 75W Typical output power
• 14.5 dB power gain
• 67% Drain efficiency
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
1
1 page  
Part Number System
CGHV35060MP
Plastic Overmold
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
3.5 GHz
60 W
MP -
Table 1.
Note1: Alpha characters used in frequency
code indicate a value greater than 9.9 GHz.
See Table 2 for value.
Character Code
Code Value
A
B
C
D
E
F
G
H
J
K
Examples:
0
1
2
3
4
5
6
7
8
9
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
5 CGHV35060MP Rev 0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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