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PDF uPG2183T6C Data sheet ( Hoja de datos )
| Número de pieza | uPG2183T6C | |
| Descripción | 4 W HIGH POWER SP4T SWITCH | |
| Fabricantes | NEC | |
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DATA SHEET
GaAs INTEGRATED CIRCUIT
μPG2183T6C
4 W HIGH POWER SP4T SWITCH
DESCRIPTION
The μPG2183T6C is a GaAs MMIC SP4T (Single Pole Four Throw) switch which was designed for digital cellular
phone application.
This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 16-pin plastic QFN (Quad Flat Non-leaded) (T6C) package. And this package is able to
high-density surface mounting.
FEATURES
• Supply voltage
: Vbat = 2.9 to 3.2 V (3.0 V TYP.)
• Standby mode voltage
: VDD (H) = 1.7 to Vbat V (2.65 V TYP.)
: VDD (L) = 0 to +0.05 V (0 V TYP.)
• Switch control voltage
: Vcont (H) = 1.7 to Vbat V (2.65 V TYP.)
: Vcont (L) = 0 to +0.05 V (0 V TYP.)
• Operating Frequency
: f = 0.5 to 2.5 GHz
• Low insertion loss
: Lins1 = 0.4 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: Lins2 = 0.55 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: Lins3 = 0.7 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
• High isolation
: ISL1 = 24 dB TYP. @ f = 0.5 to 1.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
• Handling power
: Pin (0.1 dB) = +37.5 dBm TYP. @ f = 0.9 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
: Pin (0.1 dB) = +35.0 dBm TYP. @ f = 1.8 GHz, Vbat = 3.0 V, VDD = Vcont (H) = 2.65 V, Vcont (L) = 0 V
• High-density surface mounting : 16-pin plastic QFN (T6C) package (3.0 × 3.0 × 0.75 mm)
APPLICATIONS
• Digital cellular phone etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
μPG2183T6C-E2 μPG2183T6C-E2-A 16-pin plastic QFN
(T6C) (Pb-Free)
2183
• Embossed tape 12 mm wide
• Pin 13, 14, 15 and 16 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPG2183T6C
Caution Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can
damage this device. This device must be protected at all times from ESD. Static charges may
easily produce potentials of several kilovolts on the human body or equipment, which can
discharge without detection. Industry-standard ESD precautions must be employed at all times.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10762EJ01V0DS (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
1 page  
μPG2183T6C
EVALUATION CIRCUIT
ANT
RF1
RF2
Vbat
56 pF
56 pF
1 000 pF
56 pF
12 11 10
9
13
14
15
16
1234
8
7
6
5
56 pF
56 pF
RF3
RF4
1 000 pF
1 000 pF
1 000 pF
Vcont1
VDD Vcont2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
C1 C1
Switch
C1 LESD
C1 C1
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
• The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground
for best performance.
Data Sheet PG10762EJ01V0DS
5
5 Page 
PACKAGE DIMENSIONS
16-PIN PLASTIC QFN (T6C) (UNIT: mm)
(Top View)
3.0±0.1
(Side View)
μPG2183T6C
(Bottom View)
16-0.32±0.1
0.75±0.1
1.7±0.05
16-0.23±0.05
Data Sheet PG10762EJ01V0DS
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet uPG2183T6C.PDF ] | |
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