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PDF R1RP0416DI Datasheet ( Hoja de datos )

Número de pieza R1RP0416DI
Descripción 4M High Speed SRAM
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R1RP0416DI datasheet

1 Page

R1RP0416DI pdf
R1RP0416DI Series
Recommended DC Operating Conditions
(Ta = 40 to +85°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
4.5 5.0
VSS*4
00
Input voltage
VIH 2.2
V
IL
0.5*1
Notes:
1.
V
IL
(min)
=
2.0
V
for
pulse
width
(under
shoot)
6
ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all V pins must be on the same level.
SS
Max Unit
5.5 V
0V
VCC + 0.5*2 V
0.8 V
DC Characteristics
(Ta = 40 to +85°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Input leakage current
Output leakage current*1
Operating power supply current
Symbol
|I |
LI
|I |
LO
ICC
Min
Standby power supply current
I
SB
ISB1
Output voltage
V
OL
VOH 2.4
Max
2
2
160
40
5
0.4
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
V = V to V
IN SS
CC
V = V to V
IN SS
CC
CS# = VIL, IOUT = 0 mA
Other inputs = VIH/VIL
CS# = V ,
IH
Other inputs = VIH/VIL
VCC CS# VCC 0.2 V,
(1)
0
V
V
IN
0.2
V
or
(2) VCC VIN VCC 0.2 V
I = 8 mA
OL
IOH = 4 mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Input capacitance*1
CIN
Input/output capacitance*1
C
I/O
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
VIN = 0 V
V =0V
I/O
Rev.1.00, Mar.12.2004, page 5 of 12

5 Page

R1RP0416DI arduino
R1RP0416DI Series
Write Timing Waveform (2) (CS# Controlled)
Address
WE# *3
CS# *3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance *4
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 11 of 12

11 Page





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