DataSheet.es    


PDF R1RP0408DI Data sheet ( Hoja de datos )

Número de pieza R1RP0408DI
Descripción 4M High Speed SRAM
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de R1RP0408DI (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! R1RP0408DI Hoja de datos, Descripción, Manual

R1RP0408DI Series
Wide Temperature Range Version
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0114-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0408DI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
Single 5.0 V supply: 5.0 V ± 10 %
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
Center VCC and VSS type pin out
Temperature range: 40 to +85°C
Ordering Information
Type No.
R1RP0408DGE-2PI
Access time
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Rev.1.00, Mar.12.2004, page 1 of 10

1 page




R1RP0408DI pdf
R1RP0408DI Series
DC Characteristics
(Ta = 40 to +85°C, VCC = 5.0 V ± 10 %, VSS = 0 V)
Parameter
Symbol
Input leakage current
Output leakage current
Operation power supply current
IILII
IILOI
ICC
Min
Max
2
2
130
Standby power supply current I
SB
ISB1
40
5
Output voltage
VOL
0.4
V
OH
2.4
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = V ,
IH
Other inputs = VIH/VIL
f = 0 MHz
VCC CS# VCC 0.2 V,
(1)
0
V
V
IN
0.2
V
or
(2)
V
CC
V
IN
V
CC
0.2
V
IOL = 8 mA
I
OH
=
4
mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Input capacitance*1
CIN
6
Input/output capacitance*1
CI/O
8
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
VIN = 0 V
VI/O = 0 V
Rev.1.00, Mar.12.2004, page 5 of 10

5 Page





R1RP0408DI arduino
Revision History
R1RP0408DI Series Data Sheet
Rev. Date
0.01 Oct. 01, 2003
1.00 Mar.12.2004
Contents of Modification
Page Description
Initial issue
Deletion of Preliminary

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet R1RP0408DI.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
R1RP0408D4M High Speed SRAMRenesas
Renesas
R1RP0408DGE-0PR4M High Speed SRAMRenesas
Renesas
R1RP0408DGE-2LR4M High Speed SRAMRenesas
Renesas
R1RP0408DGE-2PR4M High Speed SRAMRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar