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PDF TESDQ5V0 Data sheet ( Hoja de datos )
| Número de pieza | TESDQ5V0 | |
| Descripción | Bi-directional ESD Protection Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Product
TESDQ5V0
Taiwan Semiconductor
Bi-directional ESD Protection Diode
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50μs)
- 100W peak pulse power per line (tp=8/20μs)
- Protects one bi-directional I/O line
- Working Voltage: 5V
- Packing code with suffix "G" means
green compound (halogen free)
DFN1006 (0402)
MECHANICAL DATA
- Case: DFN1006 (0402)
- Molding compound flammability rating: UL 94V-0
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- High temperature soldering guaranteed : 260oC/10s
- Weight: 0.5 mg (approximately)
- Marking code: M
APPLICATIONS
-Cell Phone Handsets and Accessories
-Notebooks, Desktops, and Servers
-Keypads, Side Keys, LCD Displays
-Portable Instrumentation
-Touch Panel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Pulse Power (tp=8/20μs waveform)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
PPP
VESD
100
± 15
±8
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
UNIT
W
KV
oC
PARAMETER
Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
IR = 1 mA
VRWM = 5 V
Clamping Voltage
IPP = 1 A
IPP = 2 A
Junction Capacitance
VR = 0 V , f = 1.0 MHz
SYMBOL
VWM
V(BR)
IR
VC
CJ
MIN
-
6
-
-
-
MAX
5
-
1
12.5
20
10
UNIT
V
V
μA
V
pF
Document Number: DS_S1412016
Version: D14
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TESDQ5V0.PDF ] | |
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