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Número de pieza | BAS16 | |
Descripción | 225mW SMD Switching Diode | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS16 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Small Signal Product
225mW SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Bend lead SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 8 ± 0.5 mg
- Marking Code: A6
SOT-23
BAS16
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
PD 225
Repetitive peak reverse voltage
VRRM
75
Mean forward current
IO 150
Non-repetitive peak forward surge current @ t = 0.001 s
Thermal resistance (Junction to Ambient)
(Note 1)
IFSM
RθJA
2
375
Junction and storage temperature range
TJ , TSTG
-65 to +150
PARAMETER
SYMBOL
Reverse breakdown voltage
IR = 100 μA
IF = 1.0 mA
V(BR)
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF
Reverse leakage current
Junction capacitance
VR = 75 V
VR = 0 V , f = 1.0 MHz
IR
CJ
Reverse recovery time
(Note 2)
trr
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Reverse recovery test conditions: IF=10mA , IR=10mA , RL=100 Ω, IRR= 1mA
MIN
75
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
1
2.0
3.0
UNIT
mW
V
mA
A
oC/W
oC
UNIT
V
V
μA
pF
ns
Document Number: DS_S1312001
Version: D14
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BAS16.PDF ] |
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