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PDF PBSS9110D Data sheet ( Hoja de datos )
| Número de pieza | PBSS9110D | |
| Descripción | PNP transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
Min Typ Max
Unit
- - −100 V
- - −1 A
- - −3 A
[1] -
170 320
mΩ
1 page  
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Unit
ICBO
collector-base cut-off VCB = −80 V; IE = 0 A
-
-
−100 nA
current
VCB = −80 V; IE = 0 A;
-
-
−50 μA
Tj = 150 °C
ICES collector-emitter cut-off VCE = −80 V;
current
VBE = 0 V
- - −100 nA
IEBO emitter-base cut-off VEB = −4 V; IC = 0 A - - −100 nA
current
hFE DC current gain
VCE = −5 V;
IC = −1 mA
150 -
-
VCE = −5 V;
IC = −250 mA
150 -
-
VCE = −5 V;
IC = −0.5 A
[1] 150
-
450
VCE = −5 V; IC = −1 A [1] 125
-
-
VCEsat collector-emitter
saturation voltage
IC = −250 mA;
IB = −25 mA
- - −120 mV
IC = −0.5 A;
IB = −50 mA
[1] - - −180 mV
IC = −1 A;
IB = −100 mA
[1] - - −320 mV
RCEsat collector-emitter
saturation resistance
IC = −1 A;
IB = −100 mA
[1] -
170 320
mΩ
VBEsat
base-emitter saturation IC = −1 A;
voltage
IB = −100 mA
[1] - - −1.1 V
VBEon base-emitter turn-on VCE = −5 V; IC = −1 A
-
-
−1.0 V
voltage
td delay time
tr rise time
ton turn-on time
ts storage time
tf fall time
VCC = −10 V;
IC = −0.5 A;
IBon = −0.025 A;
IBoff = 0.025 A
- 20 -
- 60 -
- 80 -
- 290 -
- 120 -
ns
ns
ns
ns
ns
toff turn-off time
fT
transition frequency
VCE = −10 V;
IC = −50 mA;
f = 100 MHz
- 410 -
100 -
-
ns
MHz
Cc collector capacitance VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
- - 17 pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS9110D_3
Product data sheet
Rev. 03 — 22 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PBSS9110D_3
Modifications:
20091122
Product data sheet
-
PBSS9110D_2
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 16 “Wave soldering footprint SOT457 (SC-74)”: updated
PBSS9110D_2
20060713
Product data sheet
-
PBSS9110D_1
PBSS9110D_1
20040611
Objective data sheet
-
-
PBSS9110D_3
Product data sheet
Rev. 03 — 22 November 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
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