(PDF) MS13N30 Datasheet - N-Channel 30-V (D-S) MOSFET

Número de pieza	MS13N30
Descripción	N-Channel 30-V (D-S) MOSFET
Fabricantes	Bruckewell
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No Preview Available ! MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13N30] © Bruckewell Technology Corporation Rev. A -2014 1 page MS13N30 N-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.7-GATE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TEMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS13N30] © Bruckewell Technology Corporation Rev. A -2014 5 Page

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PDF MS13N30 Data sheet ( Hoja de datos )