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PDF UPA2794AGR Data sheet ( Hoja de datos )
| Número de pieza | UPA2794AGR | |
| Descripción | N- AND P-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2794AGR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2794AGR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
• Low on-state resistance
N-channel RDS(on)1 = 25 mΩ MAX. (VGS = 10 V, ID = 2.8 A)
RDS(on)2 = 33 mΩ MAX. (VGS = 4.5 V, ID = 2.8 A)
P-channel RDS(on)1 = 43 mΩ MAX. (VGS = −10 V, ID = −2.8 A)
RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.8 A)
• Low input capacitance
N-channel Ciss = 2200 pF TYP.
P-channel Ciss = 2200 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
N-channel 1 : Source 1
2 : Gate 1
7, 8: Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
μ PA2794AGR-E1-ATNote
μ PA2794AGR-E2-AT Note
Pure Sn
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
PACKAGE
Power SOP8
EQUIVALENT CIRCUITS
N-channel
P-channel
Drain
Drain
Gate
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19922EJ1V0DS00 (1st edition)
Date Published August 2009 NS
Printed in Japan
2009
1 page  
μ PA2794AGR
TYPICAL CHARACTERISTICS (TA = 25°C)
(1) N-channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2.5
2 units
2
Mounted on ceramic
substrate of
2000 mm2 x 1.6 mm
1.5 1 unit
1
0.5
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
10 (VGS = 10 V)
ID(pulse)
ID(DC)
1 Power Dissipation Limited
0.1 Secondary Breakdown Limited
Single pulse
0.01
Mounted on ceramic substrate of
2000 mm22 x 1.6 mm
0.01 0.1
1
10
VDS - Drain to Source Voltage - V
100
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
Rth(ch-A) = 73.5°C/Wi
Rth(ch-A) = 62.5°C/Wi
10
1
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width – s
Rth(ch-A) (1 unit)
Rth(ch-A) (2 units)
10 100 1000
Data Sheet G19922EJ1V0DS
5
5 Page 
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
μ PA2794AGR
Reel side
Draw-out side
−E1 TYPE
−E2 TYPE
MARKING INFORMATION
A2794
A
1 pin mark
Pb-free plating marking
Lot code
RECOMMENDED SOLDERING CONDITIONS
The μ PA2794AGR should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Partial heating
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
IR60-00-3
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet G19922EJ1V0DS
11
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