(PDF) KTD1510 Datasheet - EPITAXIAL PLANAR NPN TRANSISTOR

Número de pieza	KTD1510
Descripción	EPITAXIAL PLANAR NPN TRANSISTOR
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage. KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector PowerDissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 150 5 10 1 100 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO IEBO V(BR)CEO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Transition Frequency fT Collector Output Capacitance Cob TEST CONDITION VCB=160V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IC=2A VCB=10V, f=1MHz, IE=0 MIN. - - 150 5000 - - - - TYP. - - - 12000 - - 50 230 MAX. 100 100 - 20000 2.5 3.0 - - UNIT A A V V V MHz pF 2008. 4. 21 Revision No : 2 1/3 1 page

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PDF KTD1510 Data sheet ( Hoja de datos )