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Número de pieza | IRF7910PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF7910PbF
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
l Power Management for Netcom,
Computing and Portable Applications
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
HEXFET® Power MOSFET
RDS(on) max
15mΩ @VGS = 4.5V
ID
10A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
10
7.9
79
2.0
1.3
16
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
1
07/21/08
1 page IRF7910PbF
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01 0.1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
1 10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF7910PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
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