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PDF IRF7907TRPBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7907TRPBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) m ax Q1
(@VGS = 10V)
RDS(on) m ax Q2
(@VGS = 10V)
Qg (typical) Q1
Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
30 V
16.4
mΩ
11.8
6.7
14
nC
9.1
A
11
S2 1
G2 2
S1 3
G1 4
IRF7907TRPbF-1
HEXFET® Power MOSFET
8 D2
7 D2
6 D1
5 D1
SO-8
Applications
l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game
Consoles and Set-Top Box
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7907PbF-1
Package Type
SO-8
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7907TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
9.1 11
7.3 8.8
76 85
2.0 2.0
1.3 1.3
0.016
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
Notes through
are on page 11.
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October 16, 2014
1 page  
Q1 - Control FET
1.5
ID = 9.1A
VGS = 10V
IRF7907TRPbF-1
Typical Characteristics
Q2 - Synchronous FET
1.5
ID = 11A
VGS = 10V
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
10.0 TJ = 150°C
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
ID = 8.8A
30
TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
5 www.irf.com © 2014 International Rectifier
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
40
ID = 11A
30
20
TJ = 125°C
10
TJ = 25°C
0
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
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October 16, 2014
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IRF7907TRPbF-1
Qualification information†
Qualification level
I ndus tr ial
(per JE DEC JE S D47F†† guidelines)
Moisture Sensitivity Level
RoHS compliant
SO-8
MS L1
(per JE DE C J-S TD-020D†† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, Q1: L = 0.41mH, RG = 25Ω, IAS = 7.0A; Q2: L = 0.38mH, RG = 25Ω, IAS = 8.8A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Rθ is measured at TJ approximately 90°C.
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7907VPbF-1" to "IRF7907VTRPbF-1" -all pages
• Removed the "IRF7907VPbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier
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October 16, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF7907TRPBF-1.PDF ] | |
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