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PDF IRF7904PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7904PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRF7904PbF-1
VDS
RDS(on) max Q1
(@VGS = 10V)
RDS(on) max Q2
(@VGS = 10V)
Qg (typical) Q1
Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
30 V
16.2
mΩ
10.8
7.5 nC
14
7.6
A
11
G1 1
S2 2
S2 3
G2 4
HEXFET® Power MOSFET
8 D1
7 S 1 / D2
6 S 1 / D2
5 S 1 / D2
SO-8
Applications
l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles and Set-Top Box
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7904PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7904PbF-1
IRF7904TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
7.6 11
6.1 8.9
61 89
1.4 2.0
0.9 1.3
0.011
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
20
90
Q2 Max.
20
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 19, 2014
1 page  
Q1 - Control FET
1.5
ID = 7.6A
VGS = 10V
IRF7904PbF-1
Typical Characteristics
Q2 - Synchronous FET
1.5
ID = 11A
VGS = 10V
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
10.0 TJ = 150°C
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100.0
TJ = 150°C
10.0
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
ID = 7.6A
35
30
25
20 TJ = 125°C
15
10
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 17. Typical On-Resistance vs.Gate Voltage
5 www.irf.com © 2014 International Rectifier
1.0 TJ = 25°C
VGS = 0V
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
25
ID = 11A
20
15 TJ = 125°C
10
TJ = 25°C
5
2.0
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 18. Typical On-Resistance vs.Gate Voltage
Submit Datasheet Feedback
May 19, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7904PBF-1.PDF ] | |
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