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PDF IRF7831PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7831PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
PD - 95134B
IRF7831PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max Qg (typ.)
30V 3.6m:@VGS = 10V 40nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Max.
30
± 12
21
17
170
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 10
www.irf.com
1
6/30/05
1 page  
IRF7831PbF
24
20
16
12
8
4
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.4
2.2
2.0
ID = 250µA
1.8
1.6
1.4
1.2
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01 SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
Ci=
C
τi/Ri
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R 4R 4
τ4τ4
R 5R 5
Ri (°C/W) τi (sec)
0.514 0.000182
τCτ 2.445
τ5 τ5
20.64
17.80
0.030949
0.36354
6.99
8.604 109
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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