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PDF IRF7807ZPBF Data sheet ( Hoja de datos )

Número de pieza IRF7807ZPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95211B
Applications
l Control FET for Notebook Processor Power
l Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
IRF7807ZPbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg(typ.)
:30V 13.8m @VGS = 10V 7.2nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Max.
30
± 20
11
8.7
88
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
6/29/06

1 page




IRF7807ZPBF pdf
IRF7807ZPbF
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.2
2.0
1.8 ID = 250µA
1.6
1.4
1.2
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01 SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 5.770 0.002691
τ3τ3 24.37 0.54585
19.86 7.25
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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