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PDF IRF7807VD1PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7807VD1PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
QSW (typical)
QOSS (typical)
ID
(@TA = 25°C)
30 V
25 mΩ
9.5 nC
3.4 nC
12 nC
8.3 A
IRF7807VD1PbF-1
FETKY MOSFET / SCHOTTKY DIODE
SO-8
A/S 1
A/S 2
8 K/D
7 K/D
A/S 3
6 K/D
G4
5 K/D
D
Top View
Applications
l Co-Pack N-channel HEXFET® POWER MOSFET and Schottky Diode
l Ideal for Synchronous Rectifiers in DC-DC
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7807VD1PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7807VD1PbF-1
IRF7807VD1TRPbF-1
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
25°C
(VGS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃÃ25°C
70°C
Schottky and Body Diode
fAverage Forward Current
25°C
70°C
Junction & Storage Temperature Range
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
IF (AV)
TJ , TSTG
Symbol
RθJA
RθJL
Max
30
±20
8.3
6.6
66
2.5
1.6
3.5
2.2
-55 to 150
Typ Max
––– 50
––– 20
Units
V
A
W
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
May 19, 2014
1 page  
IRF7807VD1PbF-1
2.0 ID = 7.0A
1.5
0.030
0.025
1.0 0.020
ID = 7.0A
0.5 0.015
0.0 VGS = 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.010
2.0
4.0 6.0 8.0 10.0 12.0 14.0
VGS, Gate -to -Source Voltage (V)
16.0
Fig 7. On-Resistance Vs. Gate Voltage
60
VGS
TOP
4.5V
50
3.5V
3.0V
2.5V
2.0V
40 BOTTOM 0.0V
30
20
10
0
0
0.0V
380μs PULSE WIDTH
Tj = 25°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 7. Typical Reverse Output Characteristics
70
VGS
TOP
4.5V
60 3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
30
20
10
0
0
380μS PULSE WIDTH
0.0V Tj = 150°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 8. Typical Reverse Output Characteristics
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
May 19, 2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7807VD1PBF-1.PDF ] | |
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