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Número de pieza | IRF7530PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRF7530PbF
l Trench Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
lAvailable in Tape & Reel
l Lead-Free
S1
G1
S2
G2
Description
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
HEXFET® Power MOSFET
18
27
36
45
Top View
D1
D1 VDSS = 20V
D2
D2 RDS(on) = 0.030Ω
Micro8™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
5.4
4.3
40
1.3
0.80
10
33
± 12
-55 to + 150
Units
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1
5/13/04
1 page 5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7530PbF
80 ID
TOP
2.2A
4.0A
BOTTOM 5.0A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
t2
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
10
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF7530PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF7530PBF | Power MOSFET ( Transistor ) | International Rectifier |
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