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PDF DMB54D0UDW Data sheet ( Hoja de datos )
| Número de pieza | DMB54D0UDW | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMB54D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features
• N-Channel MOSFET and PNP Transistor in One Package
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
• ESD Protected MOSFET Gate up to 2kV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.006 grams (approximate)
SOT-363
D2
Q1
B
E
Q2
ESD protected gate up to 2kV
TOP VIEW
Maximum Ratings – MOSFET, Q1 @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Continuous
Symbol
VDSS
VGSS
ID
IDM
S2 G2 C
TOP VIEW
Internal Schematic
Value
50
±12
160
560
Units
V
V
mA
mA
Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
-45
-5.0
-100
Unit
V
V
V
mA
Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
1 of 7
www.diodes.com
December 2009
© Diodes Incorporated
1 page  
DMB54D0UDW
1,000
TA = 150°C
PNP Transistor
VCE = 5V
0.5
0.4
IC
IB = 10
100
TA = 25°C
TA = -50°C
10
1
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1,000
VCE = 5V
0.3
0.2 TA = 25°C
TA = 150°C
0.1
TA = -50°C
0
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 11 Collector-Emitter Saturation Voltage
vs. Collector Current
100
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current
Ordering Information (Note 5)
Notes:
Part Number
DMB54D0UDW-7
Case
SOT-363
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Packaging
3000/Tape & Reel
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb Mar
23
DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
MB2
MB2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2010
X
Apr
4
2011
Y
May Jun
56
5 of 7
www.diodes.com
2012
Z
2013
A
Jul Aug Sep
78
9
2014
B
2015
C
Oct Nov Dec
OND
December 2009
© Diodes Incorporated
5 Page | ||
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