|
|
PDF STP10LN80K5 Data sheet ( Hoja de datos )
| Número de pieza | STP10LN80K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP10LN80K5 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
STP10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP10LN80K5
VDS
800 V
RDS(on) max.
0.63 Ω
ID
8A
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STP10LN80K5
Table 1: Device summary
Marking
10LN80K5
Package
TO-220
Packing
Tube
December 2015
DocID027747 Rev 2
This is information on a product in full production.
1/14
www.st.com
1 page  
STP10LN80K5
Symbol Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 8 A, VGS = 0 V
- 8A
- 32 A
- 1.5 V
trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs,VDD =
Qrr
Reverse recovery
charge
60 V
See Figure 17: "Test circuit for
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times"
- 350
- 3.9
- 22.5
ns
µC
A
trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs VDD =
- 505
Qrr
Reverse recovery
charge
60 V, Tj = 150 °C
See Figure 17: "Test circuit for
-5
IRRM
Reverse recovery
current
inductive load switching and diode
recovery times"
- 20
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA,ID= 0 A
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID027747 Rev 2
5/14
5 Page 
STP10LN80K5
4.1 TO-220 type A package information
Figure 21: TO-220 type A package outline
Package information
DocID027747 Rev 2
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STP10LN80K5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP10LN80K5 | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |