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PDF T405Q-600H Data sheet ( Hoja de datos )

Número de pieza T405Q-600H
Descripción Sensitive 4Q 4A TRIAC
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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® T405Q-600B-TR & T405Q-600H
Sensitive 4Q 4A TRIAC
MAIN FEATURES
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
4
600
5
Unit
A
V
mA
DESCRIPTION
The T405Q-600B-TR and the T405Q-600H 4
quadrants sensitive TRIACs are intended in gen-
eral purpose applications where high surge cur-
rent capability is required, such as irrigation
systems. These TRIACs feature a gate current ca-
pability sensitivities of 5mA.
A2
G
A1
A2
A2
A2 G
A1
DPAK
(T4-B)
G
A2
A1
IPAK
(T4-H)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value Unit
IT(RMS)
ITSM
I2t
RMS on-state current (Full sine wave) DPAK / IPAK Tc= 110°C
Non repetitive surge peak on-state
current (Full cycle, Tj initial = 25°C )
I2t Value for fusing
F = 50Hz t = 20ms
F = 60Hz t = 16.7ms
tp = 10 ms
4
35
38
6
A
A
A2s
dI/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT, tr 100ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Repetitive F = 100 Hz
50 A/µs
tp = 20µs
Tj = 125°C
4
Tj = 125°C
0.5
- 40 to + 150
- 40 to + 125
A
W
°C
July 2002 - Ed: 1A
1/7

1 page




T405Q-600H pdf
T405Q-600B-TR & T405Q-600H
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]
3.0
2.5
2.0
IGT
1.5
1.0 IH & IL
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
25 50 75
100
dV/dt [Tj] / dV/dt [Tj = 125°C]
8
7
6
5
4
3
2
1
0
125 25
Tj(°C)
50 75
VD=VR=400V
100 125
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
circuit board FR4, Cu = 35µm).
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10 S(cm²)
0
0 2 4 6 8 10 12 14 16 18 20
5/7

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