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PDF D44E1 Data sheet ( Hoja de datos )
| Número de pieza | D44E1 | |
| Descripción | SILICON NPN DARLINGTON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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D44E1
D44E2
D44E3
SILICON
NPN DARLINGTON
POWER TRANSISTORS
TO-220 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR D44E series
devices are silicon NPN Darlington power transistors,
manufactured by the epitaxial base process, with
2 integrated resistors and 1 diode for stability and
protection. These devices are designed for switching
and output applications where high gain is desired.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEO
VCES
VEBO
IC
IB
PD
TJ, Tstg
ΘJC
D44E1 D44E2 D44E3
40 60 80
40 60 80
7.0
10
1.0
80
-65 to +150
1.56
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICES
VCE=Rated VCES
IEBO
VEB=7.0V
BVCEO
IC=100mA (D44E1)
40
BVCEO
IC=100mA (D44E2)
60
BVCEO
IC=100mA (D44E3)
80
VCE(SAT) IC=5.0A, IB=10mA
VCE(SAT) IC=10A, IB=20mA
VBE(SAT) IC=5.0A, IB=10mA
hFE VCE=5.0V, IC=5.0A
1000
Cob VCB=10V, IE=0, f=1.0MHz
ton IC=10A, IB1=20mA
1.0
toff IC=10A, IB1=IB2=20mA
2.5
MAX
500
5.0
1.5
3.0
2.5
200
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
μA
mA
V
V
V
V
V
V
pF
μs
μs
R1 (4-March 2014)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D44E1.PDF ] | |
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