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PDF KDS127E Data sheet ( Hoja de datos )
| Número de pieza | KDS127E | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KDS127E (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
VRM
80 V
Reverse Voltage
VR 80 V
Maximum (Peak) Forward Current
IFM
300 *
mA
Average Forward Current
IO
100 *
mA
Surge Current (10ms)
IFSM
2* A
Power Dissipation
PD
200**
mW
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
KDS127E
SILICON EPITAXIAL PLANAR DIODE
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
E E 0.35+_ 0.05
H 0.5+_ 0.05
P P J 0.12+_ 0.05
P5
1. D1 ANODE
2. D2 CATHODE
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
5. D4 CATHODE
6. D1/D2 ANODE/CATHODE
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 54
D4 D3
D1 D2
12
3
Marking
65
4
Type Name
US
Lot No.
1 23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
VF
IR
CT
TEST CONDITION
IF=100mA
VR=80V
VR=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2014. 3. 31
Revision No : 2
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KDS127E.PDF ] | |
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