(PDF) KDS123U Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDS123U
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA KDS123U SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300* 100* Surge Current (10mS) IFSM 2* Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Unit Rating. Total Rating=Unit Rating 0.7 UNIT V V mA mA A mW E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. CATHODE 2 2. ANODE 1 3. ANODE 2/ CATHODE 1 3 D1 D2 21 USM Marking Lot No. Type Name US ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF IR CT TEST CONDITION IF=100mA VR=80V VR=6V, f=1MHz MIN. - - - TYP. - - - MAX. 1.2 0.1 3.5 UNIT V A pF 2008. 9. 8 Revision No : 1 1/3 1 page

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PDF KDS123U Data sheet ( Hoja de datos )