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PDF KDS121V Data sheet ( Hoja de datos )
| Número de pieza | KDS121V | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package
: VSM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
VRM
VR
IFM
IO
IFSM
PD
Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING
85
80
300 *
100 *
2*
100
150
-55 150
UNIT
V
V
mA
mA
A
mW
KDS121V
SILICON EPITAXIAL PLANAR DIODE
E
B
2
13
PP
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
P
MILLIMETERS
1.2 +_0.05
0.8 +_0.05
0.5 +_ 0.05
0.3 +_ 0.05
1.2 +_ 0.05
0.8 +_ 0.05
0.40
0.12+_ 0.05
0.2 +_ 0.05
5
3
21
VSM
Marking
B3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
VF(1)
VF(2)
VF(3)
IR
CT
Reverse Recovery Time
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
A
pF
nS
2011. 12. 23
Revision No : 1
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KDS121V.PDF ] | |
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