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Número de pieza | SE2310 | |
Descripción | SOT-23 Plastic-Encapsulate MOSFETS | |
Fabricantes | WILLAS | |
Logotipo | ||
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SOT-23 Plastic-Encapsulate MOSFETS
SE2310
N-Channel MOSFET
DESCRIPTION
The SE2310 uses advanced trench technology to provide excellent
RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
Battery Switch
DC/DC Converter
MARKING: S10
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Moisture Sensitivity Level 1
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
2013-10
WILLAS ELECTRONIC CORP.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SE2310.PDF ] |
Número de pieza | Descripción | Fabricantes |
SE2310 | SOT-23 Plastic-Encapsulate MOSFETS | WILLAS |
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