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PDF DMP2002UPS Data sheet ( Hoja de datos )

Número de pieza DMP2002UPS
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
DMP2002UPS
Green
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Features
V(BR)DSS
-20V
RDS(ON)
1.9mΩ @ VGS = -10V
2.4mΩ @ VGS = -4.5V
3.8mΩ @ VGS = -2.5V
ID
TC = +25°C
-60A
-60A
-60A
Description
This new generation P-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch.
Applications
Switch
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI5060-8
Top View
Pin1
Bottom View
D
G
S
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMP2002UPS-13
Case
POWERDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
POWERDI5060-8
DDDD
P2002US
YY WW
=Manufacturers Marking
P2002US = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 4 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated

1 page




DMP2002UPS pdf
30
VGS = 0V
25
100000
DMP2002UPS
f = 1MHz
20
15 TA = 150oC
10000
Ciss
10
TA = 125oC
5 TA = 85oC
TA = 25oC
TA = -55oC
0
0 0.2 0.4 0.6 0.8 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6 VDS = -10V, ID = -20A
4
2
0
0 50 100 150 200 250 300 350 400 450 500
Qg (nC)
Figure 11 Gate Charge
1
Coss
1000
0
Crss
4 8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
1000
RDS(ON)
Limited
100
10
PW =1s
PW =100ms
PW =10ms
PW =1ms
PW =100µs
TJ(Max)=150
TC=25
VGS=10V
Single Pulse
DUT on infinite heatsink
1
0.1 1
PW =10µs
PW =1µs
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.7
D = 0.05
0.01
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
1E-06 1E-05
0.0001
0.001
0.01
0.1
RθJC(t)=r(t) * RθJC
RθJC=0.9oC/W
Duty Cycle, D=t1/t2
1 10
100
1000
t1, Pulse Duration Time (sec)
Figure 13 Transient Thermal Resistance
POWERDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 4 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated

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