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PDF DMN6040SVT Data sheet ( Hoja de datos )
| Número de pieza | DMN6040SVT | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN6040SVT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on) max
44mΩ @ VGS = 10V
60mΩ @ VGS = 4.5V
ID
TA = 25°C
5.0A
4.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Backlighting
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) test in production
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
Drain
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Gate
Body
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMN6040SVT-7
Case
TSOT26
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
32D
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated
1 page  
0.10
0.08
0.06
0.04
0.02
VGS = 4.5V
ID = 500mA
VGS = 2.5V
ID = 200mA
0
- 50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
20
16
12 TA = 25°C
8
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 12 Diode Forward Voltage vs. Current
VDS = 30V
ID = 4.3A
DMN6040SVT
4.0
3.5
3.0
2.5
2.0 ID = 1mA
1.5 ID = 250µA
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
Ciss
f = 1MHz
Coss
Crss
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate Charge
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN6040SVT.PDF ] | |
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