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PDF VS-6CWT04FN Data sheet ( Hoja de datos )

Número de pieza VS-6CWT04FN
Descripción High Performance Schottky Generation
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
13
Anode 2 Anode
Common
cathode
VS-6CUT04
2
1 Common 3
Anode cathode Anode
VS-6CWT04FN
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
45 V
0.54 V
3 mA at 125 °C
175 °C
Common cathode
14 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells pybass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
3 Apk, TJ = 125 °C (typical, per leg)
Range
VALUES
45
0.46
- 55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
VS-6CUT04
VS-6CWT04FN
45
UNITS
V
V
°C
UNITS
V
Revision: 03-Nov-11
1 Document Number: 94650
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-6CWT04FN pdf
www.vishay.com
100
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
10
TJ = 25 °C
1 TJ = 125 °C
TJ = 175 °C
0.1
1
10 100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
TJ = 25 °C
10
TJ = 125 °C
TJ = 175 °C
1
1
10 100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 03-Nov-11
5 Document Number: 94650
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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