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PDF K4070 Data sheet ( Hoja de datos )

Número de pieza K4070
Descripción MOSFET ( Transistor ) - 2SK4070
Fabricantes NEC 
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4070
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)
Low gate charge
QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)
Gate voltage rating : ±30 V
Avalanche capability ratings
<R> ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4070-S15-AY Note
2SK4070(1)-S27-AY Note
2SK4070-ZK-E1-AY Note
2SK4070-ZK-E2-AY Note
Pure Sn (Tin)
PACKING
Tube 70 p/tube
Tube 75 p/tube
Tape 2500 p/reel
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) Note2 PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
600
±30
±1.0
±4.0
22
1.0
150
55 to +150
0.8
38.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006

1 page




K4070 pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
ID = 1.0 A
15
10 0.5 A
5
0
-50
VGS = 10 V
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
SWITCHING CHARACTERISTICS
1000
tf
100
VDD = 150 V
VGS= 10 V
RG = 10 Ω
td(off)
10 td(on)
tr
1
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
VGS = 10 V
0.1 0 V
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1
VF(S-D) – Source to Drain Voltage - V
1.2
2SK4070
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
Ciss
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10 100
VDS - Drain to Source Voltage – V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
500
400
300
200
100
0
0
VDD = 450 V
250 V
150 V
12
10
9
8
VGS 7
6
5
4
3
VDS 2
ID = 1.0 A 1
0
3456
QG – Gate Chage - nC
1000
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF – Diode Forward Current - A
100
Data Sheet D18785EJ2V0DS
5

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