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PDF PG12GXTS6 Data sheet ( Hoja de datos )
| Número de pieza | PG12GXTS6 | |
| Descripción | TVS Diode Array | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)
Unidirectional protection of five I/O lines.
Low clamping voltage.
Low operating and leakage current.
Small package for use in portable electronics.
APPLICATIONS
Cell phone handsets and accessories.
Cordless Phones.
Personal digital assistants (PDA’s)
Notebooks, desktops PC & servers.
Portable instrumentation.
Set-Top Bosx, DVD Player.
Digital Camera.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
SYMBOL
PPK
IPP
Tj
Tstg
RATING
350
15
-55 150
-55 150
UNIT
W
A
PG12GXTS6
TVS Diode Array for ESD
Protection in Portable Electronics
E
K BK
16
25
34
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. (TVS) D1
2. COMMON ANODE
3. (TVS) D2
4. (TVS) D3
5. (TVS) D4
6. (TVS) D5
TS6
Marking
65 4
Lot No.
2GX
123
65
D5 D4
D1
1
2
4
D3
D2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Clamping Voltage
VC
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=12V
IPP=5A, tp=8/20 s
IPP=15A, tp=8/20 s
VR=0V, f=1MHz
Between I/O Pins and GND
MIN.
-
13.3
-
-
-
-
TYP.
-
-
-
-
-
MAX.
12
-
1
19
23
UNIT
V
V
A
V
135 150
pF
2003. 7. 10
Revision No : 0
1/2
1 page | ||
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