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PDF PF2015UDF12 Datasheet ( Hoja de datos )

Número de pieza PF2015UDF12
Descripción ESD/EMI Filter
Fabricantes KEC 
Logotipo KEC Logotipo

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PF2015UDF12 Hoja de datos, Descripción, Manual
SEMICONDUCTOR
TECHNICAL DATA
PF2015UDF12
ESD/EMI Filter
APPLICATION
I/O ESD protection for mobile handsets, notebook, PDAs, etc.
EMI filtering for data ports in cell phones, PDAs, notebook computers
EMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
EMI/RFI filtering
ESD Protection to IEC 61000-4-2 Level 4
Low insertion loss
Good attenuation of high frequency signals
Low clamping voltage
Low operating and leakage current
Six elements in one package
DESCRIPTION
PF2015UDF12 is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates six pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PF2015UDF12 provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
SYMBOL
PR
*PD
Tj
Tstg
EQUIVALENT CIRCUIT
FILTERn*
200
FILTERn*
RATING
100
600
150
-55 150
UNIT
mW
A
Pin 1
TOP VIEW
C
E
16
GND PAD
12 D 7
BOTTOM VIEW
KL
SIDE VIEW
1,12 : Filter channel 1
2,11 : Filter channel 2
3,10 : Filter channel 3
4,9 : Filter channel 4
5,8 : Filter channel 5
6,7 : Filter channel 6
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
2.50
1.20
1.80 +_ 0.10
0.20 +_ 0.05
0.40
0.30 +_ 0.10
0.25 +_ 0.05
0.20 Min
0.50 +_ 0.05
0.125
0.03+0.02/-0.03
UDFN-12
MARKING
Type Name
T8
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
1.50
0.40
15pF
15pF
0.30
GND
0.45
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
VRWM
VBR
IR
fc-3dB
RLINE
CLINE
TEST CONDITION
-
It=1mA
VRWM=3.3V
VLine=0V, ZSOURCE=50 , ZLOAD=50
Between Input and Output
VLine=0V DC, 1MHz, Between I/O Pins and GND
VLine=2.5V, 1MHz, Between I/O Pins and GND
MIN.
-
6
-
-
160
36
24
TYP.
-
-
-
100
200
45
30
MAX.
5
-
1.0
-
240
54
36
UNIT
V
V
A
MHz
pF
2009. 6. 4
Revision No : 3
1/2

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