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Número de pieza | IRFHM8235PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
±20
7.7
13.4
7.7
25
V
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
IRFHM8235PbF
HEXFET® Power MOSFET
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<4.1°C/W)
Low Profile (<1.05mm)
Industry-Standard Pin out
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8235PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8235TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 10
Max.
± 20
16
13
50
32
25
240
3.0
30
0.024
-55 to + 150
Units
V
A
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
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June 30, 2014
1 page 24.0
ID = 20A
20.0
16.0
12.0
TJ = 125°C
8.0
4.0
0.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
100
10
IRFHM8235PbF
180
160
TOP
ID
4.0A
140
8.6A
BOTTOM 20A
120
100
80
60
40
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single avalanche event: pulse current vs. pulse width
1.0E-01
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFHM8235PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFHM8235PBF | Power MOSFET ( Transistor ) | International Rectifier |
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