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PDF IRFHM8228PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM8228PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
±20
5.2
8.7
9.0
25
V
V
m
nC
A
Applications
Control or synchronous MOSFET for synchronous buck converter
IRFHM8228PbF
HEXFET® Power MOSFET
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.7°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8228PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8228TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 10
Max.
± 20
19
15
65
41
25
260
2.8
34
0.023
-55 to + 150
Units
V
A
W
W/°C
°C
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June 30, 2014
1 page  
IRFHM8228PbF
18 200
ID = 20A
ID
TOP
4.4A
14
160 9.2A
BOTTOM 20A
10
TJ = 125°C
6
TJ = 25°C
2
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
120
80
40
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
1 pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
1.0E-02
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June 30, 2014
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