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PDF IRFHM3911TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM3911TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
100
115
17
11
V
m
nC
A
Applications
POE+ Power Sourcing Equipment Switch
IRFHM3911TRPbF
HEXFET® Power MOSFET
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM3911PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM3911TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
3.2
11
6.6
20
36
2.8
29
0.023
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
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July 1, 2014
1 page  
400
350
300
250
200
150
100
ID = 6.3A
TJ = 125°C
TJ = 25°C
200
160
120
80
40
IRFHM3911TRPbF
ID
TOP
1.4A
2.7A
BOTTOM 6.3A
50
4
8 12 16
VGS, Gate-to-Source Voltage (V)
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
0.1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
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July 1, 2014
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| PDF Descargar | [ Datasheet IRFHM3911TRPBF.PDF ] | |
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