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PDF IRFH8307TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH8307TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
30 V
1.3 m
50 nC
1.3
ID
(@TC (Bottom) = 25°C)
100
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
StrongIRFET™
IRFH8307TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDSon (<1.3m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH8307PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8307TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC (Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
42
33
100
100
400
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
1 page  
IRFH8307TRPbF
6
ID = 50A
5
4
3
2 TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate-to-Source Voltage (V)
2000
1600
1200
ID
TOP 15A
21A
BOTTOM 50A
800
400
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Typical Avalanche Current vs. Pulse width
1.0E-02
1.0E-01
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
5 Page | ||
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| PDF Descargar | [ Datasheet IRFH8307TRPBF.PDF ] | |
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