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PDF RTH23007-10 Data sheet ( Hoja de datos )
| Número de pieza | RTH23007-10 | |
| Descripción | GaN Doherty Hybrid Amplifier | |
| Fabricantes | RFHIC | |
| Logotipo |  |
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GaN Doherty Hybrid Amplifier RTH23007-10
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• Asymmetric Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
• 4G/ LTE system
• Small cell
Package Type : NP-8CL
Description
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high
power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and
powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series
is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal
dissipation.
Electrical Specifications @ Vds =31V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
2300
-
2400
Power Gain
12 14
-
Gain Flatness
dB -3.0
-
3.0
Input Return Loss
- -9 -6
Pout @ Average dBm - 38.5 -
Pout @ Psat
dBm 46
47
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-27 -24
-53 -
Drain Efficiency % 40
45
-
Carrier Idq
- 120 -
mA
Total Ids
- 500 -
- -3.5 -2.0
Supply Voltage V -
-5.0 -4.0
30.5 31 31.5
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=38.5dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. RTH Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Carrier Idq = 150mA
Vgp = -4.8V
Pulse Width=20us, Duty10%
Non DPD
With DPD
Vgc
Vgp
Vds
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
5
28 x 19 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/7
All specifications may change without notice
Version 1.1
1 page  
GaN Doherty Hybrid Amplifier
Package Dimensions (Type: NP-8CL)
* Unit: mm[inch] | Tolerance: ±0.15[.008]
RTH23007-10
▲ Top View
▲ Side View
▲ Bottom View
Pin Description
Pin No Function Pin No Function Pin No Function Pin No Function
1 GND 4
Vgp
7
GND
10
Vds
2 RF Input 5
GND
8 RF Output 11
GND
3 GND 6
Vds
9
GND
12
Vgc
Recommended Pattern
Recommended Mounting Configuration
* Mounting Configuration Notes
1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat.
2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws
be added near the heatsink to mount the board
3. In designing the necessary RF trace, width will depend upon the PCB material and construction.
4. Use 1 oz. Copper minimum thickness for the heatsink.
5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink
6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
5/7
All specifications may change without notice
Version 1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RTH23007-10.PDF ] | |
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