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Número de pieza | KF5N65P | |
Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KF5N65P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 650V, ID= 5A
Drain-Source ON Resistance : RDS(ON)=1.75
Qg(typ) = 14.5nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF5N65P KF5N65F
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
5 5*
3.0 3.0*
15
150
A
mJ
3.8 mJ
4.5
100 41.7
0.8 0.33
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
1.25
3.0
/W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
/W
PIN CONNECTION
D
KF5N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
KF5N65P
O
C
F
G
B
Q
L
J
P
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF5N65F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 12. 16
Revision No : 1
1/7
1 page KF5N65P/F
Fig12. Transient Thermal Response Curve
(KF5N65P)
101
100
Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single
Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-1 100 101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF5N65F)
101
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-1 100 101
TIME (sec)
2014. 12. 16
Revision No : 1
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet KF5N65P.PDF ] |
Número de pieza | Descripción | Fabricantes |
KF5N65D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF5N65F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF5N65I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF5N65P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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