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PDF KF3N40W Data sheet ( Hoja de datos )
| Número de pieza | KF3N40W | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 2A
Drain-Source ON Resistance : RDS(ON)=3.4
Qg(typ.) =4.4nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
400
Gate-Source Voltage
VGSS
30
Drain Current
@TC=25
@TC=100
2*
ID
1.2*
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
IDP
EAS
EAR
dv/dt
6*
52
0.2
4.5
Drain Power
Dissipation
TA=25
Derate above25
PD
2**
0.02
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
10.0
62.5**
* : Drain current limited by maximum junction temperature.
** : Surface Mounted on FR4 Board 2 Inch 2 Inch 1mm.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
KF3N40W
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
2010. 6. 16
Revision No : 0
1/6
1 page  
KF3N40W
2010. 6. 16
Revision No : 0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KF3N40W.PDF ] | |
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