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PDF BFU520XR Data sheet ( Hoja de datos )
| Número de pieza | BFU520XR | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BFU520XR
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143R package.
The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
Maximum stable gain 20 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB
IC
Ptot
hFE
CCBS
fT
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
open collector
Tsp 87 C
IC = 5 mA; VCE = 8 V
VCB = 8 V; f = 1 MHz
IC = 10 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 5 30 mA
[1] -
-
450 mW
60 95 200
- 0.28 -
pF
- 10.5 -
GHz
1 page  
NXP Semiconductors
Table 9. Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
s212
insertion power gain
NFmin minimum noise figure
BFU520XR
NPN wideband silicon RF transistor
Conditions
f = 433 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 433 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 433 MHz; VCE = 8 V; S = opt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V; S = opt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V; S = opt
IC = 1 mA
IC = 5 mA
IC = 10 mA
Min Typ Max Unit
[1]
- 17 -
- 23.5 -
- 26 -
[1]
dB
dB
dB
- 14 -
- 20 -
- 22 -
[1]
dB
dB
dB
- 11.5 -
- 17 -
- 17.5 -
dB
dB
dB
- 10.5 -
- 21 -
- 23.5 -
dB
dB
dB
- 9.5 -
- 17.5 -
- 19 -
dB
dB
dB
- 6.5 -
- 12.5 -
- 13 -
dB
dB
dB
- 0.5 -
- 0.75 -
- 0.85 -
dB
dB
dB
- 0.65 -
- 0.8 -
- 0.9 -
dB
dB
dB
- 0.9 -
- 0.95 -
- 1.0 -
dB
dB
dB
BFU520XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 22
5 Page 
NXP Semiconductors
BFU520XR
NPN wideband silicon RF transistor
_V_
G%
DDD
IC = 10 mA; Tamb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
9&( 9
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
*S PD[
G%
DDD
9&( 9
IC = 10 mA; Tamb = 25 C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
BFU520XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 22
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| Páginas | Total 22 Páginas | |
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