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PDF IRF8736PBF-1 Data sheet ( Hoja de datos )

Número de pieza IRF8736PBF-1
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF8736PBF-1 Hoja de datos, Descripción, Manual

VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
30 V
4.8 mΩ
17 nC
18 A
IRF8736PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Applications
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8736PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8736PbF-1
IRF8736TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
18
14.4
144
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
1 www.irf.com © 2013 International Rectifier
Typ.
–––
–––
Submit Datasheet Feedback
Max.
20
50
Units
°C/W
November 22, 2013

1 page




IRF8736PBF-1 pdf
IRF8736PbF-1
20
16
12
8
4
0
25
50 75 100 125
TA, Ambient Temperature (°C)
150
2.4
2.2
2.0
1.8 ID = 50μA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τa
Ri (°C/W)
1.396574
τι (sec)
0.000246
τ3 τ4
τ3 τ4
7.206851 0.037927
27.1278 1.0882
14.26877 30.3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01 0.1
1
10 100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013

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