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Número de pieza | IRF8714PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
30 V
8.7 mΩ
8.1 nC
14 A
IRF8714PbF-1
HEXFET® Power MOSFET
S1
AA
8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Applications
l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC Converters in Networking Systems
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8714PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8714PbF-1
IRF8714TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through
are on page 9
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
November 22, 2013
1 page IRF8714PbF-1
14
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0
ID = 25μA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
0.001
1E-006
R 1R 1
R 2R 2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
τJ τJ
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
1.9778
7.4731
26.2617
0.000165
0.022044
0.82275
Notes:
1. Duty Factor D = t1/t2
Ci= τi/Ri
Ci= τi/Ri
14.2991 28.4
2. Peak Tj = P dm x Zthja + T A
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF8714PBF-1.PDF ] |
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IRF8714PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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