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PDF BFU590Q Data sheet ( Hoja de datos )
| Número de pieza | BFU590Q | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
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BFU590Q
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
3-pin SOT89 package.
The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 11 dB at 900 MHz
PL(1dB) 22 dBm at 900 MHz
8 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 2.0
- 8.0
Max Unit
24 V
12 V
24 V
2V
200 mA
2000 mW
130
- pF
- GHz
1 page  
NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
Table 9. Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
s212
insertion power gain
PL(1dB) output power at 1 dB gain compression
Conditions
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
Min Typ
[1]
- 17
- 17.5
- 17.5
[1]
- 11
- 11
- 11
[1]
-6
- 6.5
- 6.5
- 14.5
- 16
- 16
-9
- 10
- 10
- 3.5
- 4.5
- 4.5
- 20.5
- 23
- 20
- 22
- 19.5
- 22
Max Unit
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dBm
- dBm
- dBm
- dBm
- dBm
- dBm
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 50 mA
(2) IC = 80 mA
Fig 16. Input reflection coefficient (s11); typical values
DDD
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 50 mA
(2) IC = 80 mA
Fig 17. Output reflection coefficient (s22); typical values
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
DDD
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BFU590Q.PDF ] | |
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