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PDF BFU580G Data sheet ( Hoja de datos )
| Número de pieza | BFU580G | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 120 C
hFE DC current gain
IC = 30 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 30
[1] -
-
60 95
- 1.1
- 11
Max Unit
24 V
12 V
24 V
2V
60 mA
1000 mW
130
- pF
- GHz
1 page  
NXP Semiconductors
Table 9. Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
s212
insertion power gain
NFmin minimum noise figure
BFU580G
NPN wideband silicon RF transistor
Conditions
f = 433 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 433 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 433 MHz; VCE = 8 V; S = opt
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 900 MHz; VCE = 8 V; S = opt
IC = 5 mA
IC = 20 mA
IC = 30 mA
f = 1800 MHz; VCE = 8 V; S = opt
IC = 5 mA
IC = 20 mA
IC = 30 mA
Min Typ Max Unit
[1]
- 20 -
- 22 -
- 22.5 -
[1]
dB
dB
dB
- 16 -
- 15.5 -
- 15.5 -
[1]
dB
dB
dB
- 9.5 -
- 10 -
- 10.5 -
dB
dB
dB
- 18 -
- 20 -
- 20.5 -
dB
dB
dB
- 12.5 -
- 14 -
- 14.5 -
dB
dB
dB
- 7.5 -
- 8.5 -
- 8.5 -
dB
dB
dB
- 0.65 -
- 1.05 -
- 1.25 -
dB
dB
dB
- 0.75 -
- 1.1 -
- 1.3 -
dB
dB
dB
- 0.9 -
- 1.2 -
- 1.4 -
dB
dB
dB
BFU580G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 21
5 Page 
NXP Semiconductors
BFU580G
NPN wideband silicon RF transistor
_V_
G%
DDD
IC = 20 mA; Tamb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
9&( 9
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
*S PD[
G%
DDD
9&( 9
IC = 30 mA; Tamb = 25 C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
BFU580G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 21
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