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PDF STD10P10F6 Data sheet ( Hoja de datos )

Número de pieza STD10P10F6
Descripción P-CHANNEL POWER MOSFET
Fabricantes STMicroelectronics 
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STD10P10F6
P-channel 100 V, 0.136 Ω typ., 10 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD10P10F6
VDSS
100 V
RDS(on) max
0.18 Ω
ID
10 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STD10P10F6 10P10F6 DPAK Tape and reel
For the P-channel Power MOSFET the
actual polarity of the voltages and the
current must be reversed.
October 2014
DocID026365 Rev 2
This is information on a product in full production.
1/15
www.st.com

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STD10P10F6 pdf
STD10P10F6
Symbol
VSD(1)
trr
Qrr
IRRM
Table 7: Source drain diode
Parameter
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, VGS = 0
ISD = 10 A,
di/dt = 100 A/µs,
VDD = 80 V
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
Min.
-
-
-
-
Typ.
26.5
36.5
2.7
Max.
1.1
Unit
V
ns
nC
A
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
DocID026365 Rev 2
5/15

5 Page





STD10P10F6 arduino
STD10P10F6
Package mechanical data
Figure 14: DPAK (TO-252) type A footprint
All dimensions are in mm
DocID026365 Rev 2
11/15

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