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Número de pieza | KTC3770S | |
Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KTC3770S (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S21e|2=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
20
12
3
100
150
150
-55 150
UNIT
V
V
V
mA
mW
KTC3770S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
hFE Rank
RType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
ICBO
IEBO
hFE (Note1)
Cob
Cre
fT
|S21e|2
VCB=10V, IE=0
VEB=1V, IC=0
VCE=10V, IC=20mA
VCB=10V, IE=0, f=1MHz (Note2)
VCE=10V, IC=20mA
VCE=10V, IC=20mA, f=1GHz
Noise Figure
NF VCE=10V, IC=7mA, f=1GHz
Note 1 : hFE Classification A:50~100, B:80~160, C:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
A
A
pF
pF
GHz
dB
dB
2003. 2. 12
Revision No : 1
1/5
1 page KTC3770S
S11e
VCE =10V
IC=20mA
Ta=25 C
(UNIT : Ω)
j25
j50
j10
10
0
2.0
1.6
1.2
25
0.4
-j10 f=0.2GHz
50
-j25
-j50
j100
j150
j250
100 250
-j250
-j150
-j100
S12e
VCE =10V
IC=20mA
Ta=25 C
120
90
20
f=0.2GHz 16
12
150
0.4 8
0.8
2 1.2
1.6
2.0
+_ 180
10 8
6
4
2
0
60
-150
-120 -60
-90
30
0
-30
S21e
VCE =10V
IC=20mA
Ta=25 C
120
150
+_ 180
-150
-120
90
0.25
0.20
0.15
60
2.0
1.6
1.2
0.10 0.8
30
0.05 0.4
f=0.2GHz
0
0
0.05 0.10 0.15 0.20 0.25
S22e
VCE =10V
IC=20mA
Ta=25 C
(UNIT : Ω)
j25
j10
10
0
25
-j10
-30
-60
-90
-j25
j50
j100
j150
j250
50 100 250
1.2 0.8
1.6 0.4
2.0
f=0.2GHz
-j250
-j150
-j100
-j50
2003. 2. 12
Revision No : 1
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet KTC3770S.PDF ] |
Número de pieza | Descripción | Fabricantes |
KTC3770 | EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER) | KEC(Korea Electronics) |
KTC3770 | EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER) | KEC(Korea Electronics) |
KTC3770S | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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