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PDF KTC3400 Data sheet ( Hoja de datos )
| Número de pieza | KTC3400 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
DIFFERENTIAL AMP. APPLICATION.
FEATURES
Matched Pairs for Differential Amplifiers.
High Breakdown Voltage : VCEO=120V(Min.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA2400.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Emitter Current
IE
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
120
120
5
100
-100
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3400
EPITAXIAL PLANAR NPN TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0
DC Current Gain
hFE (Note) VCE=6V, IC=2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=10mA, IB=1mA
Transition Frequency
fT VCE=6V, IC=1mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Noise Figure
NF VCE=6V, IC=0.1mA, f=1kHz, Rg=10k
Note : hFE Classification G :200 400, In case of G , :A to G, GR:200~400
MIN.
-
-
120
200
-
-
-
-
TYP.
-
-
-
-
-
100
4.0
1.0
MAX.
0.1
0.1
-
400
0.3
-
-
10
UNIT
A
A
V
V
MHz
pF
dB
hFE Classification
GA
GB
GC
GD
hFE
200 220
220 250
250 280
280 310
hFE Classification
GE
GF
GG
hFE
310 340
340 370
370 400
2001. 9. 7
Revision No : 1
1/2
1 page | ||
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