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PDF IRF7507PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7507PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7507PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135Ω 0.27Ω
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.4 -1.7
1.9 -1.4
19 -14
1.25
0.8
10
± 12
16
5.0 -5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Max.
100
Units
°C/W
1
5/11/04
1 page  
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
10
- 2.0V
BOTTOM - 1.5V
1
P - Channel
IRF7507PbF
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
10
- 2.0V
BOTTOM - 1.5V
1
0.1
0.01
0.1
-1.5V
20µs PULSE WIDTH
TJ = 25°C
A
1 10
-VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
0.01
1.5
VDS = -10V
20µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0A
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
2.0 ID = -1.2A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
www.irf.com
0.1 -1.5V
0.01
0.1
20µs PULSE WIDTH
TJ = 150°C
1
A
10
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
10
TJ = 150°C
1
0.1
TJ = 25°C
0.01
0.4
VGS = 0V A
0.6 0.8 1.0 1.2
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5 1.0 1.5
-ID , Drain Current (A)
2.0
Fig 16. Typical On-Resistance Vs. Drain
Current
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7507PBF.PDF ] | |
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