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PDF IRF7495PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7495PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High frequency DC-DC converters
l Lead-Free
PD - 95288
IRF7495PbF
VDSS
100V
HEXFET® Power MOSFET
RDS(on) max
ID
:22m @VGS = 10V 7.3A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
eRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 8
www.irf.com
Max.
100
± 20
7.3
4.6
58
2.5
0.02
7.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/21/04
1 page  
IRF7495PbF
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
100
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7495PBF.PDF ] | |
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