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PDF IRF7456PBF-1 Data sheet ( Hoja de datos )

Número de pieza IRF7456PBF-1
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7456PBF-1 Hoja de datos, Descripción, Manual

VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
SMPS MOSFET
IRF7456PbF-1
20
0.0065
41
16
V
Ω
nC
A
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Applications
l High Frequency DC-DC Converters with Synchronous Rectification
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7456PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7456PbF-1
IRF7456TRPbF-1
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient„
Max.
20
± 12
16
13
130
2.5
1.6
0.02
-55 to + 150
Max.
50
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through „ are on page 8
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 20, 2013

1 page




IRF7456PBF-1 pdf
IRF7456PbF-1
20 RD
VDS
15
VGS
RG
D.U.T.
+-V DD
10 41.50VV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.01
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 20, 2013

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