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PDF IRF7389PBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7389PBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
N-CH
30
0.029
22
7.3
P-CH
-30
0.058
23
-5.3
V
Ω
nC
A
IRF7389PbF-1
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7389PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7389PbF-1
IRF7389TRPbF-1
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
N-Channel P-Channel
30 -30
± 20
7.3 -5.3
5.9 -4.2
30 -30
2.5 -2.5
2.5
1.6
82 140
4.0 -2.8
0.20
3.8 -2.2
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
50
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
May 15, 2014
1 page  
N-Channel
IRF7389PbF-1
1200
900
600
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
300 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 5.8A
16
VDS = 15V
12
8
4
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
May 15, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7389PBF-1.PDF ] | |
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